基于0.35μm高压CMOS工艺的横向线性雪崩光电二极管

Lateral linear mode avalanche photodiode through 0.35μm high voltageC MOS process

提出了一种基于0.35μm高压CMOS工艺的线性雪崩光电二极管(Avalanche Photodiode,APD)。APD采用了横向分布的吸收区-电荷区-倍增区分离(Separate Absorption,Charge and Multiplication,SACM)的结构设计。横向SACM结构采用了高压CMOS工艺层中的DNTUB层、DPTUB层、Pi层和SPTUB层,并不需要任何工艺修改,这极大的提高了APD单片集成设计和制造的自由度。测试结果表明,横向SACM线性APD的击穿电压约为114.7 V。在增益M=10和M=50时,暗电流分别约为15 nA和66 nA。有效响应波长范围为450~1050 nm。当反向偏置电压为20 V,即M=1时,峰值响应波长约为775 nm。当单位增益(M=1)时,在532nm处的响应度约为最大值的一半。

This letter reports on a lateral linear mode avalanche photodiode through 0.35μm high voltage CMOS process.The linear mode avalanche photodiode is designed and fabricated with the lateral separate absorption,charge and multiplication(SACM)structure using an epitaxial wafer.The DNTUB layer,DPTUB layer,Pi layer and SPTUB layer are used for the lateral SACM structure.This improves freedom of the design and fabrication for monolithic integrated avalanche photodiode without high voltage CMOS process modifications.The breakdown voltage for the lateral linear mode avalanche photodiode is about 114.7 V.The dark currents at gain M=10and M=50 are about 15 nA and 66 nA,respectively.The effective responsive wavelength range is 450~1050nm.And the peak responsive wavelength is about 775 nm at 20 V while M=1.With unity gain(M=1),the responsivity at 532 nm is about half of the maximum.