长波p-on-n碲镉汞红外焦平面器件高温工作性能

High temperature performance of long-wave p-on-n HgCdTe infrared focal plane detector

碲镉汞材料为窄禁带半导体,随着工作温度的升高,材料本征载流子浓度会增加,探测器截止波长会变短,暗电流增加等,会导致器件性能降低。碲镉汞红外探测器通常在77 K温度附近工作并获得很好的探测性能,但低温工作会增加探测器的制备成本、功耗、体积和重量等。为了解决这些问题,在保证探测器正常工作性能的前提下,提升探测器的工作温度是碲镉汞红外探测器的重要研究方向。p-on-n结构的碲镉汞红外焦平面器件具有低暗电流、长少子寿命等特点,有利于在高工作温度条件下获得较好的器件性能。在不同工作温度下对p-on-n长波焦平面探测器的性能进行测试分析,在110 K时p-on-n长波碲镉汞红外焦平面探测器噪声等效温差(Noise Equivalent Temperature Difference,NETD)为25.3 mK,有效像元率为99.48%,在高温条件下具备较优的工作性能。

The HgCdTe is a narrow band gap semiconductor.As the operating temperature increases,the intrinsic carrier concentration of the material will increase,the detector cut-off wavelength will become shorter,and the dark current will increase,which will cause the performance of the detector to decrease.HgCdTe infrared detectors usually work near 77 K temperature and obtain good detection performance,but low temperature operation will increase the preparation cost,power consumption,volume and weight of the detector.In order to solve these problems,under the premise of ensuring the normal working performance of the detector,increasing the operating temperature of the detector is an important research direction of the HgCdTe infrared detector.The p-on-n structure HgCdTe infrared focal plane detectors has the characteristics of low dark current and long minority carrier life,which is conducive to obtaining better detector performance under high operating temperature conditions.The performance of the p-on-n long-wave focal plane detectors is tested and analyzed at different operating temperatures.At 110 K,the noise equivalent temperature difference(NETD)of the p-on-n long-wave HgCdTe infrared focal plane detectors is 25.3 mK,and the operability is 99.48%,have better working performance under high temperature conditions.