摘要
采用常温固相反应(研磨法)来制备金属氧化物半导体钙钛矿NiSnO_(3)气敏材料.通过气敏材料的敏感性能研究,发现不同元件由于工艺方面的差异,NiSnO_(3)气敏传感器对气体的响应有较大区别;在60℃以下,NiSnO_(3)材料可以在较低温度下工作,而且温度对其影响较小.混合Al_(2)O_(3)可有效改善NiSnO_(3)材料对NH_(3)的响应速率,但其恢复时间相对缓慢.混合碳纳米管可减小整个气敏元件的电阻值,同一元件重复进行气体检测实验能够较好地恢复效果.
In this work,NiSnO_(3) perovskite metal oxide semiconductor material was prepared at room temperature using a solid phase reaction(polishing method)/spin coating method and used as gas-sensitive material.Through the research of the sensitivity performance of gas-sensitive materials,it is found that the response of NiSnO_(3) gas-sensitive sensors to gas is quite different due to the differences in the process of different components.NiSnO_(3) material can work at a lower temperature,and temperature has little effect on it below 60℃.Doping Al_(2)O_(3) can effectively improve the response rate of NiSnO_(3) material to NH_(3),but the recovery is relatively slow.Doping carbon nanotubes can reduce the resistance value of the entire gas sensor,and repeated gas detection experiments on the same element can have a better recovery effect.
作者
张浩
刘瑞
林剑
ZHANG Hao;LIU Rui;LIN Jian(School of Materials Science and Engineering,Jiangsu University of Science and Technology,Zhenjiang 212100,China;Printable Electronics Research Centre,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy ofSciences,Suzhou Industrial Park,Suzhou 215123,China)
出处
《江苏科技大学学报(自然科学版)》
CAS
北大核心
2022年第3期33-36,共4页
Journal of Jiangsu University of Science and Technology:Natural Science Edition