石墨烯光致掺杂研究进展

Photo-induced Doping in Graphene:a Review

石墨烯因其自身碳原子2D的sp^(2)杂化结构特点以及优异的力学、光学和电学性能在能源、传感、生物医学和柔性可穿戴设备等领域具有广阔的发展前景。为了实现基于石墨烯的各种电子和光电子器件的实际应用,有效调控其掺杂及能带结构是亟须解决的重要问题之一。相比于传统的晶格原子置换与表面化学修饰等方法,近十几年发展起来的一种基于外场的表面物理调控方法——光致掺杂调控法,由于具有调控灵活性好、掺杂浓度可控性强、操作容易且对石墨烯载流子迁移率影响小的优点已成为一个新的研究热点。在目前的研究中,石墨烯的光致掺杂主要通过表面气体分子吸附、衬底电荷作用以及光活性物质诱导三种方式实现并被应用于原位p-n结制备以及光电子器件(如太阳能电池和光电探测器)性能优化等方面。本文综述了石墨烯光致掺杂的机制和研究现状,最后展望了其未来的发展前景。相比于其他光致掺杂方法,基于光活性物质诱导的石墨烯光致掺杂因具有掺杂速度快、浓度高、稳定性好以及可控性强的特点具有广阔的应用前景。

Graphene has broad prospects in the fields of energy,sensing,biomedicine and flexible wearable devices due to its unique 2D sp^(2)-hybridized networks of carbon atoms and excellent mechanical,optical and electrical properties.In order to use graphene in various applications of electronic and optoelectronic devices,it is essential to precisely modulate its electronic properties through doping.Compared with traditional chemical doping methods and the surface physical control strategy based on external field,photo-induced doping is an emerging research focus area due to better flexibility,easier manipulation and slighter influence on the carrier mobility of graphene.In the current research,photo-induced doping is mainly realized through the adsorbed molecules,substrate charges and photoactive substances,which have been applied to the preparation of in-situ p-n junctions and the performance optimization of optoelectronic devices(such as solar cells and photodetectors).Herein,we review the mechanisms and research status of photo-induced doping and then look forward to its future development prospects.Compared with other methods,photo-induced graphene doping based on photoactive substances has broader application prospects due to the rapid speed,high concentration,preferable stability and controllability in doping.