期刊文献+

微系统结构均匀化模型参数的确定方法研究 被引量:2

Study on Homogenization Model Parameters Determination Method of Microsystem Structure
下载PDF
导出
摘要 在对3D封装微系统进行力学仿真建模时,硅通孔(TSV)和微焊点等结构的多尺度效应明显,需要划分大量网格,通过合理的等效处理可以降低网格数量,提高仿真效率。常规的方形柱等效使得结构失去原有微观形貌,仿真误差增加。为此,针对实际微观形貌提出了一种等效均匀化模型力学参数的确定方法。基于弹性力学方法,推导了圆柱形貌特征的TSV硅基板层力学参数的等效计算公式。对鼓球形貌特征的微焊点/下填料层均匀化模型提出了分层思想的力学参数确定方法。与现有方法相比,该方法考虑了微系统特征结构的真实形貌特征,计算效率更高,计算结果的一致性更好。 Due to the obvious multi-scale effect of the through silicon via(TSV) and the microbump structure, a large number of meshes need to be generated during mechanical simulation modeling of 3 D packaging microsystem. Resonable equivalent processing could reduce the mesh number and improve simulation efficiency. However, the actual microstructure shape may be lost, resulting in larger simulation errors when the conventional equivalent method of square column was applied. Thus, determination methods of the homogenization model parameters were proposed for actual microstructure shapes. Based on the elastic mechanics theory, the equivalent calculation methods of various material parameters of cylindrical structures such as TSV interposer layer were derived in this paper. Further, by using the derived results and based on the delamination idea, the equivalent calculation method of material parameters after homogenization of microbump/underfill layer with drum ball morphology was given. Compared with the existing methods, the proposed method considered the true morphological characteristics of microsystem structures, so the calculation efficiency was higher, and the consistency of the results was better.
作者 李逵 王鑫 李若恬 匡乃亮 仇原鹰 李静 LI Kui;WANG Xin;LI Ruotian;KUANG Nailiang;QIU Yuanying;LI Jing(Xi'an Institute of Microelectronics Technology,Xi'an 710000,P.R.China;School of Mechatronic Engineering,Xidian University,Xi’an 710071,P.R.China)
出处 《微电子学》 CAS 北大核心 2022年第3期431-436,共6页 Microelectronics
关键词 尺寸效应 均匀化方法 有限元分析 微系统 size effect homogenization method finite element analysis microsystem
  • 相关文献

参考文献6

二级参考文献30

  • 1陈思,秦飞,夏国峰.TSV转接板组装工艺对微凸点可靠性的影响[J].工程力学,2015,32(6):251-256. 被引量:2
  • 2Riebling J.Finite element modeling of ball grid array components[D].Binghamton,New York:State University of New York at Binghamton,1996.
  • 3Tsai T Y,Yeh C L,Lai Y S,et al.Transient sub-modeling analysis for board-level drop tests of electronic packages[J].IEEE Transactions on Electronics Packaging Manufacturing,2007,30(1):54-62.
  • 4Gu J,Lim C T,Tay A A O.Modeling of solder joint failure due to PCB Electronics Packaging bending during drop impact[C].Proceedings of 6th Electronics Packaging Technology Conference,EPTC 2004:678-683.
  • 5Zhang Z,Sitaraman S K,Wong C P.FEM modeling of temperature distribution of a flip-chip no-flow underfill package during solder reflow process[J].IEEE Transactions on Electronics Packaging Manufacturing,2004,27(1):86-93.
  • 6Pang J H L,Chong D Y R.Flip chip on board solder joint reliability analysis using 2-D and 3-D FEA models[J].IEEE Transactions on Advanced Packaging,2001,24(4):499-506.
  • 7Lee C C,Chang K C,Yang Y W.Lead-free solder joint reliability estimation of flip chip package using FEM-based sensitivity analysis[J].Soldering&Surface Mount Technology,2009,21(1):31-41.
  • 8Gu J,Lim C T,Tay A A O.Simulation of mechanical response of solder joints under drop impact using equivalent layer models[C].Electronic Components and Technology Conference,2005.Proceedings.55th.IEEE,2005:491-498.
  • 9Chang C L,Tsung F Y,Chih S W,et al.Reliability estimation and failure mode prediction for 3D chip stacking package with the application of wafer-level underfill[J].Microelectronic Engineering,2013,107(7):107-113.
  • 10An T,Qin F,Wu W,et al.An equivalent model of tsv silicon interposer[C].Guilin,China:International Conference on Electronic Packaging Technology&High Density Packaging,2012:583-587.

共引文献45

同被引文献8

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部