一种部分超结型薄层SOI LIGBT器件的研究

Study on a Thin Layer SOI LIGBT Device with Partial Superjunction

基于介质场增强(ENDIF)理论,提出了一种部分超结型薄硅层SOI横向绝缘栅双极型晶体管(PSJ SOI LIGBT)。分析了漂移区注入剂量和超结区域位置对器件耐压性能的影响,并在工艺流程中结合线性变掺杂技术和超结技术,使该器件实现了高垂直方向耐压和低导通电阻。测试结果表明,该器件的耐压达到816 V,比导通电阻仅为12.5Ω·mm^(2)。

Based on the enhanced dielectric layer field(ENDIF)theory,a partial superjunction thin layer SOI lateral insulated gate bipolar transistor(PSJ SOI LIGBT)is proposed.The effects of drift injection dose and superjunction location on the breakdown voltage of the device have been analyzed.Combined with linear variable doping technology and superjunction technology in the process flow,the device achieves high voltage resistance and low on-resistance.The test results show that the withstand voltage of the device reaches 816 V and the specific on-resistance is only 12.5Ω·mm^(2).