摘要
碘化铅(PbI_(2))是两步法制备钙钛矿薄膜最常使用的金属卤化物前驱体,精确控制PbI_(2)在钙钛矿薄膜中的含量和空间分布以及优化PbI_(2)薄膜的形貌结构对于制备高效稳定的太阳电池具有重要意义。探索了PbI_(2)的浓度和退火方式对钙钛矿薄膜及太阳电池性能的影响。研究发现,PbI_(2)溶液的浓度不仅决定钙钛矿薄膜中PbI_(2)的含量,也影响钙钛矿的晶粒尺寸、取向及光学吸收等性质,从而导致器件性能的改变,当钙钛矿薄膜表面分布约45%的PbI_(2)时器件性能更佳。此外,PbI_(2)的形貌、结晶性和孔隙度受退火方式的影响显著,与溶剂退火相比,通过短暂的1 min热退火制备的PbI_(2)薄膜更有利于减少钙钛矿表界面缺陷,提升器件的开路电压,最终使器件的基础光电转换效率(PCE)可以提升至20.89%。上述研究结果有助于进一步优化钙钛矿太阳电池制备工艺,提升器件性能。
Lead iodide(PbI_(2)) is the most commonly used metal halide precursor for the preparation of perovskite thin films by two-step method. It is of great significance to precisely control the contents and spatial distribution of PbI_(2)in perovskite thin films and optimize the morphology and structure of PbI_(2)thin films for the preparation of efficient and stable solar cells. The effects of PbI_(2)concentration and annealing method on the properties of perovskite thin films and the performance of solar cells were investigated. It is found that the concentration of PbI_(2)solution determines the concents of PbI_(2)in perovskite thin films, and affects its grain size, orientation and optical absorption, resulting in the changes in the performance of devices. When the distribution of PbI_(2)on the surface of perovskite thin film is about 45%, the device performance is better. Furthermore, the morphology, crystallinity and porosity of PbI_(2)are also significantly affected by the annealing method. Compared with the solvent annealing, the PbI_(2)thin film prepared by short thermal annealing for 1 min is more conducive to decrease of the surface and interface defects of the perovskite thin films and improve the open-circuit voltage of the device. Finally, the basic photoelectric conversion efficiency(PCE) of the device can increase up to 20.89%. The above research results are helpful to further optimize the fabrication process of perovskite solar cells and improve the device performances.
作者
张欣
李艳敏
吴瑞
段苹
孔乐
赵金良
邓金祥
孟军华
Zhang Xin;Li Yanmin;Wu Rui;Duan Ping;Kong Le;Zhao Jinliang;Deng Jinxiang;Meng Junhua(Faculty of Science,Beijing University of Technology,Beijing 100124,China)
出处
《微纳电子技术》
CAS
北大核心
2022年第8期742-750,共9页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61904174)。