基于SiC MOSFET的磁铁电源传导EMI特性研究

Research on EMI Characteristics of Magnet Power Supply Based on SiC MOSFET

随着磁铁电源的高频化,碳化硅(SiC)材料的金属氧化物半导体场效应晶体管(MOSFET)已经开始在加速器磁铁电源中使用,由此带来更严重的电磁干扰(EMI)问题。这里基于SiC MOSFET的磁铁电源,对其传导EMI特性进行了研究,主要研究了其干扰源和传导路径,找到了影响传导EMI的关键因素:开关频率和上升时间。此处的研究为SiC器件的磁铁电源从干扰源和传导路径上抑制传导EMI提供了理论和实验基础。

With the high frequency of power supply,silicon carbide(SiC) material metal oxide semiconductor field effect transistor(MOSFET) has begun to be used in accelerator magnet power supply,which brings more serious electromagnetic interference(EMI) problem.Magnet power supply based on SiC MOSFET is studied on its conducting EMI characteristics,mainly studying its interference source and conduction path,and finding the key factors that affect conducting EMI:switching frequency and rising time.The research provides theoretical and experimental basis for the magnet power supply of SiC device to suppress conducted EMI from interference source and conduction path.