摘要
基于降低成本和提高集成度的目的,研制了一款采用0.1μm硅基氮化镓(GaN)工艺的Ku频段多通道功率放大芯片。芯片集成了两路相同设计的功率放大通道和两路无源射频直通通道。功率放大通道采用三级放大的拓扑结构。增加了奇偶模振荡消除电路以提高功放稳定性;针对Si基GaN工艺的特点,在功放通道末级输出匹配网络提出了一种新型设计方案以提高网络的耐压能力。各射频通道之间采用接地线隔离技术以提高通道间的隔离度。芯片的功放单通道在14~17 GHz范围内,在漏压为14 V、脉冲占空比10%的工作条件下,饱和输出功率大于40 dBm,功率附加效率大于35%。双功放通道幅度一致性小于±0.15 dB,相位一致性小于3°。芯片尺寸为3.5 mm×2.85 mm。
A Ku-band multi-channel monolithic power amplifier utilizing 0.1μm Si-based GaN double heterostructure field effect transistor(DHFET)process is developed,with the purpose of lowering costs and enhancing integration level.The Monolithic Microwave Integrated Circuit(MMIC)integrates two identical power amplifying channels and another two straight-through passive radio frequency(RF)channels.The power amplifying channels adopt a three-stage topology.Odd-and-even-mode-oscillation cancelling circuits are added to improve the stability of the power amplifiers.A new type matching network is put forward for the output stages of the amplifiers to enhance the high-voltage tolerance ability in view of the unique feature of the Si-based GaN process.Ground-connecting-line technique is used to strengthen the isolation between the channels.At 14~17 GHz,each of the power amplifying channels provides a saturated output power over 40 dBm,a power added efficiency(PAE)over 35%,in the operation condition of a 14 V drain bias,and a pulse with 10%duty cycle.The amplitude and phase consistency of the two power amplifying channels are lower than±0.15 dB and 3°,respectively.The chip size is 3.5 mm×2.85 mm.
作者
姚明
YAO Ming(Southwest China Institute of Electronic Technology,Chengdu 610036,China)
出处
《电讯技术》
北大核心
2022年第9期1363-1367,共5页
Telecommunication Engineering
