焊接型IGBT器件封装状态监测方法分析

Analysis of Package Condition Monitoring Method of Wire-bonded IGBT Devices

焊接型IGBT广泛应用于轨道交通、新能源发电等领域,是电力电子装备的核心功率器件,其可靠性对系统安全运行至关重要。封装失效是焊接型IGBT器件主要失效模式之一,而封装状态监测技术是实现器件故障诊断、状态预测及智能运维的关键。针对焊接型IGBT器件封装状态监测问题,首先,分析焊接型IGBT器件封装结构,研究焊接型IGBT器件封装可靠性薄弱部位;其次,针对键合线失效与焊料层失效两种主要封装失效模式,分析不同失效模式对应的状态监测方法;最后,分析现有监测方法存在的问题,研究可用于焊接型IGBT器件封装状态监测的新方法。相关成果为焊接型IGBT器件封装状态监测提供新的研究思路。

Wire-bonded insulated gate bipolar transistor modules(WB-IGBT)are widely used in rail transit,new energy power generation,and other fields.WB-IGBT are the core power modules of power electronic equipment,and their reliability is important for the safe operation of the system.Package failure is one of the main failure modes of WB-IGBT.Package condition monitoring is the key to realize module fault diagnosis,condition prediction and intelligent operation and maintenance.In this paper,aiming at the problem of package condition monitoring of WB-IGBT,the package structure of WB-IGBT is firstly analyzed,and the parts of weak reliability in WB-IGBT are studied.Secondly,aiming at two main package failure modes,including the bond wire failure and solder layer failure,the package condition monitoring methods under different failure modes are analyzed.Finally,the problems of the existing monitoring methods are analyzed,and new methods which can be used to monitor package condition of WB-IGBT are proposed.The results provide new research ideas for the package condition monitoring of WB-IGBT.