B掺杂p型SiGe合金的制备与热电性能表征

Preparation and Thermoelectric Properties of B-Doped p-Type SiGe Alloys

以一定化学计量比均匀混合的Si、Ge、B混合粉末为原材料,使用放电等离子烧结(SPS)一步法合金化制备了p型Si_(80)Ge_(20)B_(x)(x=0.5,1.0,2.0)合金热电材料,并对样品的组成、微观形貌、热电性能进行了表征与分析。结果表明,放电等离子烧结过程实现原位合金化并烧结为块体材料。随着B掺杂量的增加,电导率明显提升,热导率显著下降,当温度为950 K时,热导率为1.79 W/(m∙K)。在1050 K时,ZT值达到了0.899。球磨和掺杂的协同作用使得SiGe合金基体内产生不同类型的缺陷特征而散射不同波长的声子,导致硅锗合金热导率的降低。

p-type Si_(80)Ge_(20)B_(x)(x=0.5,1.0,2.0) alloys thermoelectric materials were prepared by one-step alloying method using Si, Ge and B powders as raw materials. The composition, microstructure and thermoelectric properties of the samples were characterized and analyzed. The results show that in-situ one-step alloying followed by spark plasma sintering can be realized and bulk materials can be obtained. With the increase of B doping content, the electrical conductivity increases significantly and the thermal conductivity decreases significantly. When the temperature is 950 K, the thermal conductivity is 1.79 W/(m·K). At 1050 K, ZT reaches the maximum value of 0.899. Due to the synergistic effect of ball milling and doping, different types of defects are produced in SiGe structure matrix, which result in scattering of different wavelengths of phonons, leading to the decreas e of thermal conductivity of SiGe alloy.