摘要
Silicon carbide(SiC)was first found in a meteorite by Mr.Henri Moissan in Dayabro Canyon in Arizona in the US in1893.SiC has the highest quality(less than 10^(3)cm^(-2)dislocations)and maximum size(200 mm)of the wide band gap semiconductors in the world.This material has been fabricated into power devices for electric vehicles.
