环境温度对SiC MOSFET的总剂量辐射效应影响

Impacts of ambient temperature on the total ionizing dose effect of SiC MOSFET

开展不同温度下碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)总剂量效应研究。采用^(60)Coγ射线对三款国内外生产的SiCMOSFET器件进行总剂量辐照试验,获得器件阈值电压、击穿电压、导通电阻、漏电流等参数分别在25℃,100℃,175℃下的辐射损伤特性,比较器件在不同温度下辐照后器件的退化程度。仿真实验结果表明,不同器件的阈值电压、静态漏电流以及亚阈特性等辐射损伤变化都表现出对环境温度的敏感性,而导通电阻、击穿电压等则相对不敏感。此外SiCMOSFET总剂量辐射响应特性对环境温度的敏感性,还随生产厂家的不同而呈现明显差异性。分析认为,在其他条件相同情况下,器件的阈值电压、静态漏电等参数的退化程度随着辐照温度的升高而降低,主要是由于高温辐照时器件发生隧穿退火效应引起。

The total ionizing dose effect of Silicon Carbide(SiC)Metal-Oxidel-Semiconductor Field E ffect Transistor(MOSFET)at different temperatures is studied.Three SiC MOSFET devices manufactured at home and abroad are irradiated by ^(60)Coγray.The radiation damage characteristics of threshold voltage,breakdown voltage,conduction resistance and leakage current are obtained at 25℃,100℃and 175℃,respectively.The degradation degree of the devices after irradiation at different temperatures are compared.The results show that the threshold voltage,static leakage current and sub threshold characteristics of different devices are sensitive to ambient temperature,while the on resistance and breakdown voltage are relatively insensitive.In addition,the sensitivity of the total ionizing response of SiC MOSFET to ambient temperature also varies with different manufacturers.It is found that the threshold voltage,static leakage and other parameters decrease with the increase of temperature due to the the tunneling annealing effect during high temperature irradiation.