摘要
为实现硅基沟槽功率器件的快速异常处理,采用了EMMI/FIB-SEM测试方法快速检测沟槽势垒肖特基二极管电性及结构失效,阐述了多晶硅淀积过程中异常导致的漏电分析过程及处理方法。
In order to achieve quick trouble shooting for silicon trench power device product,EMMI/FIB-SEM method is adopted to detect both electrical and structure failure for Trench barrier Schottky diode,the abnormal current leakage issue that caused by doped silicon deposition process is illustrated,case solution is also listed to prevent similar problem.
作者
金磊
魏唯
陈龙
陈章隆
范江华
巩小亮
JIN Lei;WEI Wei;CHEN Long;CHEN Zhanglong;FAN Jianghua;GONG Xiaoliang(The 48th Research Institute of CETC,Changsha 410111,China)
出处
《电子工业专用设备》
2022年第4期39-42,61,共5页
Equipment for Electronic Products Manufacturing
关键词
功率器件
漏电测试
沟槽工艺
多晶硅沉积
Power device
Current leakage test
Trench fabrication process
Doped silicon deposition
