CsSn_(0.5)Ge_(0.5)I_(3)钙钛矿太阳电池性能的仿真研究

Performance Simulation Study of CsSn_(0.5)Ge_(0.5)I_(3) Perovskite Solar Cell

采用一维太阳电池模拟软件SCAPS-1D系统探究了FTO/TiO_(2)/CsSn_(0.5)Ge_(0.5)I_(3)/Cu_(2)O/Au太阳电池中钙钛矿吸收层厚度、缺陷密度以及ETL/perovskite和perovskite/HTL界面层缺陷密度对电池性能的影响.结果表明:钙钛矿吸收层厚度过薄不利于材料对光的充分吸收,过厚增加薄膜的缺陷密度,均会导致太阳电池的光电转换效率降低;不同界面层缺陷密度对器件性能有不同影响.通过优化,当吸收层厚度为800 nm,缺陷密度为1×10^(15) cm^(-3),ETL/perovskite和perovskite/HTL界面层缺陷密度分别为1×10^(15) cm^(-3)和1×10^(16) cm^(-3)时,器件可取得25.43%的光电转换效率.

The one-dimensional solar cell simulation software SCAPS-1D was used to systematically explore the effects of thickness and defect density of perovskite absorber layer together with defect density of ETL/perovskite,perovskite/HTL interface layers on the performance of FTO/TiO_(2)/CsSn_(0.5)Ge_(0.5)I_(3)/Cu_(2) O/Au solar cells.The results show that if the thickness of the perovskite absorber layer is too thin,it is not conducive to the sufficient absorption of light by the material,and if the thickness is too thick,it increases the defect density of the film.Both of the above conditions can degrade cells performance.Also,defects density of different interface layers have different effects on device performance.Through optimization,when the thickness of the absorber layer is 800 nm,the defect density is 1×10^(15) cm^(-3),and the defect density of the ETL/perovskite and perovskite/HTL interface layers are 1×10^(15) cm^(-3) and 1×10^(16) cm^(-3) respectively,the device can obtain a power conversion efficiency of 25.43%.