21vf高比容低压腐蚀箔的制备方法

Preparation of 21vf high specific capacity low pressure etched foil

在21vf高比容低压腐蚀箔制备过程中,通过在低压腐蚀工艺中引入硫酸、草酸、及A物质等添加剂,研究单一添加剂和混合添加剂对铝电解电容器用低压腐蚀箔比电容和保持率的影响。结果表明:腐蚀液的组成是影响21vf腐蚀箔性能的主要因素。在其它条件不变的情况下,在二次腐蚀溶液中加入2-8%H_(2)SO_(4)硫酸、5g/L~10g/L草酸、8-12ppmA混合添加剂时,可以使21vf的比容达到82μF/cm^(2),保持率在59%以上。本文简要介绍了此方法的实验方法及工艺流程,实验结果以供参考。

In the preparation process of 21vf high specific capacity low-voltage corrosion foil,the effects of single and mixed additives on the specific capacitance and retention of low-voltage corrosion foil for aluminum electrolytic capacitor were studied by introducing sulfuric acid,oxalic acid and substance a into the low-voltage corrosion process.The results show that the composition of etching solution is the main factor affecting the performance of 21vf etched foil.When 2-8% H_(2)SO_(4) sulfuric acid,5g/L~10g/L oxalic acid and 8-12ppma mixed additives are added to the secondary corrosion solution under the same conditions,the specific volume of 21vf can reach 82μf/cm^(2),and the retention rate is above 59%.This paper briefly introduces the experimental method and technological process of this method,and the experimental results are for reference.