355nm全固态紫外激光刻蚀碳化硅影响因子分析

Analysis of influence factors of 355nm all-solid-state UV laser etching silicon carbide

使用355 nm全固态紫外(UV)激光对碳化硅材料进行直写刻蚀,实验过程采取单一变量的原则4种影响因子对刻蚀结果产生的影响。结果表明:能量密度过大或过小都会增加刻蚀通道崩边尺寸,刻蚀深度随能量密度增大而增大;重复频率的增大会加重崩边现象,同时会导致刻蚀深度的减小;扫描速度越大刻蚀通道的崩边尺寸越大,刻蚀深度越小;扫描次数的增加在增大刻蚀深度的同时会使通道侧壁形成一定的锥度。通过对实验数据的对比分析最终得出激光刻蚀碳化硅的最优参数,对今后进行激光加工碳化硅材料的参数选取具有一定参考价值。

355 nm all-solid ultraviolet(UV) laser is used to carry out direct writing etching on silicon carbide material.The experiment process adopts the principle of single variable and the influence of four influencing factors on etching results.The results show that too large or too small energy density will increase the edge breakage size of the etching channel, and the etching depth will increase with the increase of energy density.The increase of repetition frequency will aggravate the phenomenon of edge breakage and lead to the decrease of etching depth.The larger the scanning speed is, the larger the edge breakage size is and the smaller the etching depth is.The increase of scanning number will make the channel side wall form a certain taper while increasing the etch depth.Through the comparative analysis of experimental data, the optimal parameters of laser-etched silicon carbide are finally obtained, which has certain reference value for the parameter selection of laser-processed silicon carbide materials in the future.