基于超薄贴合技术的单片集成大功率倒装LED

Monolithic Integrated High-Power Flip-Chip LED Based on Ultra-Thin Bonding Technology

采用超薄贴合技术,通过改进封装散热结构来解决大功率倒装发光二极管(LED)芯片散热和电学绝缘之间的矛盾。采用串并联的内部拓扑结构和三角电极原理开发了一款尺寸为5 mm×5 mm的单片集成大功率倒装LED芯片。使用起芯片电学延伸作用的金属片和绝缘导热凸台这一散热结构对LED芯片进行封装。在驱动电流为0.1 A时,芯片的开启电压为29 V,芯片可正常发光。在2 A的恒流电源驱动下,芯片到散热器的峰值热阻为0.44 K/W,平均热阻为0.38 K/W。加装透镜后,蓝光LED的插墙效率达到42%,白光LED的光效达到86.19 lm/W。使用超薄贴合技术成功地制备了75 W单片集成大功率倒装LED,为开发单片集成大功率LED提供了有效的途径。超薄贴合技术对单片集成大功率倒装LED的发展具有一定的推动作用。

Ultra-thin bonding technology was used to solve the contradiction between heat dissipation and electrical insulation of high-power flip-chip light emitting diode(LED)chips by improving the heat dissipation structure of the package.A monolithic integrated high-power flip-chip LED chip with the size of 5 mm×5 mm was developed by using the series parallel internal topology and the principle of triangular electrode.A heat dissipation structure of metal sheet which played the role of electrical extension of the chip and insulating heat conduction boss was used to package the LED chip.The turn-on voltage of the chip is 29 V at a driving current of 0.1 A,and the chip can emit light normally.Driven by a constant current power supply of 2 A,the peak thermal resistance of the chip to radiator is 0.44 K/W,and the average thermal resistance is 0.38 K/W.After installing the lens,the wall-plug efficiency of the blue LED can reach 42%,and the light efficiency of the white LED can reach 86.19 lm/W.75 W monolithic integrated high-power flip-chip LED was successfully prepared by using ultra-thin bonding technology,which provided an effective way for the further development of monolithic integrated high-power LEDs.The ultra-thin bonding technology will play a certain role in promoting the development of monolithic integrated high-power flip-chip LED.