双波段峰值可调PdO/n-Si/PdO异质结光电探测器

Dual Band Peak Tunable PdO/n-Si/PdO Heterojunction Photodetector

通过聚苯乙烯小球模板法在硅片上制备倒金字塔微结构,并在硅片边沿制备下沉台阶,后在硅片上表面及下沉台阶上沉积Pd膜,使用氧化法获得PdO薄膜,构建PdO/n-Si/PdO光电探测器。该光电探测器在紫外-可见光区和近红外光区均具有明显的响应峰,探测峰的峰值波长随着下沉台阶的高度或工作偏压发生移动。理论模拟结果显示探测器的光谱特性可调主要是利用下沉台阶和工作偏压来改变PdO/n-Si/PdO异质结中两个背靠背PN结的所在位置的光场分布及空间电荷区实现的。

Inverted pyramid microstructures are prepared on Si slice by polystyrene small ball template method.Then,the Pd film is deposited on the upper surface of the Si slice and the sinking step.The PdO thin film is obtained by using oxidation method,and the PdO/n-Si/PdO photodetector is constructed.The photodetector has obvious response peaks in the UV-vis region and near-infrared region,and the peak wavelength of the detection peak moves with the height of the sinking step or the working bias voltage.Theoretical simulation results show that the tunable spectral characteristics of the detector are mainly realized by by using the sinking steps and the working bias voltage to change the light field distribution and space charge region of the two back-to-back PN junctions in the PdO/n-Si/PdO heterojunction.