大尺寸Si基GaN HEMT外延薄膜的生长

Growth of Large Size Si-Based GaN HEMT Epitaxial Films

通过金属有机物化学气相沉积(MOCVD)法,在6英寸硅(111)衬底上生长了出制作高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)的无裂纹、高均匀性且翘曲度可控的GaN HEMT外延薄膜。通过引入双层AlN/Al_(0.3)Ga_(0.7)N超晶格和AlN/GaN超晶格作为Al_(x)Ga_(1-x)N应力控制层,解决了硅基GaN HEMT外延的裂纹和翘曲控制问题,且二维电子气(2DEG)浓度可达8.9×10^(12) cm^(-2),迁移率高达1980 cm^(2)/(V∙s)。器件的I-V曲线表明当漏电流为1μA/mm^(2),击穿电压大于800 V,具备较高的耐压和不漏电的特性。

GaN High Electron Mobility Transistor(HEMT)epitaxial films with no crack,high uniformity and controllable bowing have been grown on 6 inch Si(111)substrates through Metal-Organic Chemical Vapor Deposition(MOCVD).By introducing double layers AlN/Al_(0.3)Ga_(0.7)N superlattice and AlN/GaN superlattice as the Al_(x)Ga_(1-x)N stress control layers,the cracks and warping control issues of Si-based GaN HEMT epitaxy are solved.The concentration of 2DEG could up to 8.9×10^(12) cm^(-2) and the mobility is up to 1980 cm^(2)/(V∙s).The(I-V)curves of the device show that when the leakage current is 1μA/mm^(2),the breakdown voltage is greater than 800 V,which has a higher voltage resistance and non-leakage characteristics.