Nitrogen‐doped tin oxide electron transport layer for stable perovskite solar cells with efficiency over 23%

Tin oxide has made a major breakthrough in high-efficiency perovskite solar cells(PSCs)as an efficient electron transport layer by the low-temperature chemical bath deposition method.However,tin oxide often contains pernicious defects,resulting in unsatisfactory performance.Herein,we develop high-quality tin oxide films via a nitrogen-doping strategy for high-efficiency and stable planar PSCs.The aligned energy level at the interface of doped SnO_(2)/perovskite,more excellent charge extraction and reduced nonradiative recombination contribute to the enhanced efficiency and stability.Correspondingly,the power conversion efficiency of the devices based on N‐SnO_(2) film increases to 23.41% from 20.55% of the devices based on the pristine SnO_(2).The N-SnO_(2) devices show an outstanding stability retaining 97.8% of the initial efficiency after steady-state output at a maximum power point for 600s under standard AM1.5G continuous illumination without encapsulation,while less than 50% efficiency remains for the devices based on pristine SnO_(2).This simple scalable strategy has shown great promise toward highly efficient and stable PSCs.