CH_(3)NH_(3)PbI_(3)钙钛矿薄膜阵列光电探测器

Perovskite photodetector based on CH_(3) NH_(3)PbI_(3) thin film arrays

将光电性能优异、可通过低温溶液法制备的卤化物钙钛矿制成阵列型光电探测器,必将推动其在成像、光通信等领域中的应用。然而,卤化物钙钛矿易被常规溶剂(包括显影液)溶解,导致其与光刻工艺不兼容。自组装单分子疏水层结合光刻工艺的亲水-疏水图形基底制备方法能解决制备过程中极性溶剂与钙钛矿材料不兼容的问题,通过简单的旋涂(极性钙钛矿前驱体溶液仅在亲水图形区域浸润)、低温退火,可以快速获得钙钛矿阵列。CH_(3)NH_(3)PbI_(3)薄膜阵列光电探测器具有良好的光电性能,530 nm光辐照下探测率为4.7×10^(11) Jones,响应度为0.055 A/W。这项工作为制备图案可控的钙钛矿薄膜阵列光电探测器提供了一种简单而有效的策略。

Halide perovskite possesses excellent photoelectric properties and can be prepared by low-temperature solution method.Photodetector arrays made of halide perovskite are highly required in the area of imaging,optical communication and other fields.However,halide perovskite can be easily dis-solved by conventional solvents(including developer),which makes it incompatible with photolithogra-phy process.Herein,a novel method based on spin coating(the polar perovskite precursor solution only infiltrates the hydrophilic pattern area)and low-temperature annealing has been proposed to prepare per-ovskite arrays,which can solve the problem of incompatibility between polar solvents and perovskite materials.The fabricated photodetector based on CH_(3)NH_(3)PbI_(3)thin film arrays exhibits good photoelec-tric performance,with a high detectivity of 4.7×10^(11)Jones and the responsivity of 0.055 A/W under 530 nm light irradiation.This work provides a simple and effective strategy to prepare well-defined per-ovskite photodetector arrays based on thin film array.