片式钽电容短路失效故障分析及改进

Analysis and Improvement of Chip Tantalum Capacitor Short Circuit Failure

该文针对片式钽电容在实际生产和使用过程中短路失效故障率过高的问题,从元器件自身故障原理、使用工艺、电路板设计等方面进行深入分析,最终确定钽电容短路失效是钽电容自身缺陷与外界应力综合作用的结果,外界应力主要有焊接温度应力和反向电压冲击。针对以上原因,从钽电容自身质量、工艺、设计等方面进行改进,通过加严筛选、改手工焊、优化回流曲线等具体措施,有效控制了片式钽电容短路失效故障,保证了其可靠性,提高了钽电容使用质量。

This paper points at the high failure rate of chip tantalum capacitor short circuit in the actual production and use process, making an in-depth analysis from the fault principle of components, the use of technology, circuit board design and other aspects. Finally, it is determined that the short circuit failure of chip tantalum capacitor is the result of the combined action of its own defects and external stress. The external stress mainly includes welding temperature stress and reverse voltage impact. For the above reasons, the quality, process and design of chip tantalum capacitor are improved. Through strict screening, manual welding,optimization of reflow curve and other specific measures, the short circuit failure of chip tantalum capacitor is effectively controlled, which ensures the reliability and improves the use quality of chip tantalum capacitor.