摘要
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.
作者
Hong Wang
Zunren Lv
Shuai Wang
Haomiao Wang
Hongyu Chai
Xiaoguang Yang
Lei Meng
Chen Ji
Tao Yang
王虹;吕尊仁;汪帅;王浩淼;柴宏宇;杨晓光;孟磊;吉晨;杨涛(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of In formation Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China;Zhejiang Laboratory,Hangzhou 310027,China)
基金
Project supported by the National Natural Science Foundation of China (Grant Nos.62035012,62074143,and 62004191)
Zhejiang Lab (Grant No.2020LC0AD02)
