1 nm Al插入层调节NiGe/n-Ge肖特基势垒

Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode

通过引入1 nm铝作为插入层,研究了铝在调制镍与n型锗反应时对镍化锗与n型锗接触的肖特基势垒高度的影响.采用正向Ⅰ-Ⅴ法、Cheung法和Norde法分别提取了镍化锗与n型锗接触的肖特基二极管的串联电阻、势垒高度和理想因子.研究表明,在镍和锗衬底之间引入1 nm铝插入层,能够有效降低势垒高度,且其能够在350℃—450℃保持稳定.

NiGe/n-Ge Schottky barrier height is modulated by Ni/n-Ge reaction with 1 nm Al as an intermediate layer.The series resistance,barrier height and ideal factor of Schottky diodes are extracted by the forward Ⅰ-Ⅴ method,Cheung method and Norde method,respectively.Comparing with Ni/n-Ge SBD,the introduction of 1 nm Al insertion layer between Ni and Ge substrates can effectively reduce the barrier height and maintain stability between 350℃ and 450℃.