期刊文献+

纳米材料中辐射诱导缺陷的研究进展

Progress in the research on radiation-induced defects in nanomaterials
下载PDF
导出
摘要 固体材料的辐射缺陷是核科学领域重要的研究方向。近年来,半导体材料、低维材料和高比表面多孔材料中缺陷的精准合成与调控正成为辐射技术应用的新方向之一。辐射导致的材料缺陷工程在改善其电磁学、催化、吸附及力学性能等诸多方面有着广阔的应用前景,势必在材料学、电子器件、催化转化与环境领域中发挥重要作用。为此,本文对辐射法制备及改性纳米材料过程中缺陷结构形成及调控的研究现状进行综述,并对该研究方向的发展趋势进行展望。 Radiation-induced defects in nanomaterials are an important aspect of the research on the effects of radiation on materials.Recently,the research on radiation-induced defects in semiconductor materials,lowdimensional materials,and high-specific-surface porous materials has become a new application of radiation technology.Radiation-induced nanomaterial defect engineering has the potential to be used to improve the electromagnetic,catalytic,adsorption,and mechanical properties of nanomaterials and will play an important role in materials science,electronic-device development,catalysis,and environmental science.Therefore,this review presents the recent progress and state-of-art in the formation and tuning mechanism of radiation-induced defects in nanomaterials and provides a direction for future development.
作者 甘平平 陈先美 姜志文 王运龙 马骏 GAN Pingping;CHEN Xianmei;JIANG Zhiwen;WANG Yunlong;MAJun(College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 230026,China)
出处 《辐射研究与辐射工艺学报》 CAS CSCD 2022年第5期1-12,共12页 Journal of Radiation Research and Radiation Processing
基金 国家自然科学基金(22006067、11975122、21906083) 江苏省自然科学基金(BK20190384)资助。
关键词 辐射致缺陷 纳米材料 二维材料 多孔材料 辐射损伤 Radiation-induced defects Nanomaterials 2D materials Porous materials Radiation damage
  • 相关文献

参考文献2

二级参考文献29

  • 1Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666.
  • 2Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197.
  • 3Geim A K and Novoselov K S 2007 Nat. Mater. 6 183.
  • 4Farmer D B, Chiu H Y, Lin Y M, Jenkins K A, Xia F and Avouris P 2009 Nano Lett. 9 4474.
  • 5Li Q, Cheng Z G, Li Z J, Wang Z H and Fang Y 2010 Chin. Phys. B 19 097307.
  • 6Teweldebrhan D and Balandin A A 2009 Appl. Phys. Lett. 94 013101.
  • 7Xu M S, Fujita D and Hanagata N 2010 Nanotechnology 21 265705.
  • 8Ouyang F P, Wang H Y, Li M J, Xiao J and Xu H 2008 Acta Phys. Sin. 57 7132 (in Chinese).
  • 9Ouyang F P, Xu H and Lin F 2009 Acta Phys. Sin. 58 4132 (in Chinese).
  • 10Ni Z H, Wang H M, Kasim J, Fan H M, Yu T, Wu Y H, Feng Y P and Shen Z X 2007 Nano Lett. 7 2758.

共引文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部