铟砷锑红外探测器的研究进展

Research Progress of InAsSb Infrared Detectors

InAs_(1-x)Sb_(x)属于Ⅲ-Ⅴ族化合物半导体合金材料,随Sb组分含量的不同,室温下可覆盖3~12μm波长,并且InAsSb材料具有载流子寿命长、吸收系数大、载流子迁移率高等优点,是一种具有广阔应用前景的红外光电材料。探测器可以在150 K甚至近室温下工作,具有较高的灵敏度和探测率,是低功耗、小型化、高灵敏度和快响应中长波红外探测系统的良好选择,InAsSb中长波红外探测器受到广泛的关注和研究。本文首先简要概述了InAsSb材料的基本性质。其次,对国内外InAsSb红外探测器发展状况进行了介绍。最后,对InAsSb红外探测技术的发展进行了总结与展望。

The cut-off wavelength of the spectral responses of the Ⅲ-Ⅴ semiconductor alloys InAs_(1-x)Sb_(x) can be changed from 3 to 12μm by tuning the relative amount of antimony in the alloy at room temperature.In addition,with longer carrier lifetime,higher optical absorption coefficient and higher carrier mobility can be achieved.InAsSb is a type of prospective MWIR and LWIR detector material that has potential applications.InAsSb detector can work at 150 K even at near room temperature with higher sensitivity and detectivity.Hence,it is one of the best choices for low-power,miniaturized,low-cost,highly sensitive,and fast-response MWIR and LWIR detection systems.InAsSb detectors have been widely studied and developed.In this paper,the fundamental material properties are described.Next,the status of the InAsSb infrared photodetectors domestic and abroad is introduced.Finally,the development of the InAsSb infrared detection technology is summarized and prospected.