512×512 MOS电阻阵列驱动控制方法研究

Drive-and-control Scheme for 512×512 MOS Resistor Array

MOS电阻阵列是构成红外成像目标仿真系统的关键核心设备,其投射出的红外图像的质量将直接影响红外成像制导半实物仿真试验的逼真度和可信度。针对新一代国产512×512元MOS电阻阵列工作方式的改变、像元规模与图像数据传输量的倍增对驱动控制系统提出的更高要求,研究了与其配套的驱动控制方案。研究基于光纤数据传输、PCI-E高速总线、FPGA解决了高数据吞吐率、高精度时序信号生成问题,并设计了一种多路模拟信号高速建立的方法。经仿真验证表明,该驱动方案可满足512×512 MOS电阻阵列快照模式下图像刷新率达到200 Hz,单个像元灰度等级为16 bit,为电阻阵列的实际工程应用提供了参考。

The metal oxide semiconductor(MOS)resistor array is the key core device of infrared imaging target simulation systems.The quality of its projected infrared image directly affects the fidelity and reliability of infrared imaging guidance hardware-in-the-loop simulation tests.As the new generation domestic 512´512 MOS resistance array work mode and the multiplication of pixel scale and image data transmission resulted in higher requirements for drive control systems,the appropriate drive-and-control scheme was studied.The study was based on optical fiber data transmission and a PCI-Express high-speed bus and field programmable gate array.The problems of high data throughput and high-precision timing-signal generation were solved,and a high-speed establishment method for multi-channel analog signal was designed.The simulation verification showed that the drive-and-control scheme can reach a refresh rate of more than 200 Hz in the snapshot mode of the 512×512 MOS resistance array,and the gray-scale of each pixel was 16 bits.This study provides a reference for practical engineering applications of 512×512 MOS resistor array.