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电离放电形成高浓度臭氧水溶液方法

The method of high concentration ozone solution produced by ionization discharge
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摘要 臭氧水溶液(臭氧水)可在几秒钟内无选择致死微小生物及灭活病毒,最终将有机污染物氧化分解为CO_(2)、H_(2)O。采用强电离放电将氧离解、电离,离解电离成O、O^(-)、O^(+)、O(^(1)D)和O_(2)(a^(1)Δg)等活性粒子,其中O^(-)和O_(2)(a^(1)Δg)活性粒子在强电离放电电场的放电通道中反应形成浓度高达268 mg/L O_(3),之后再用强激励方法把O_(3)高效率溶于水中形成高浓度臭氧水。当强电离放电电场强度为96 kV/cm,放电功率为363 W,臭氧溶于水反应时间为6.2 min时,臭氧水浓度达到38.5 mg/L,将为臭氧水溶液应用提供有利基础条件。 Ozone solution could kill tiny organisms and inactivated virus non-selectively,and oxidatively degrade of organic pollutants into CO_(2) and H_(2)O in a few seconds.Using strong ionization discharge to dissociate、ionize and dissociative ionize O_(2) into reactive oxygen species such as O,O^(-),O^(+),O(^(1)D)and O_(2)(a^(1) Δg),et al.Among them,reactive species O^(-) reacted with O_(2)(a^(1) Δg) to form O_(3) with a concentration up to 268 mg/L in the electrical discharge channel of strong ionization discharge field,and then high concentration ozone solution was produced by efficient dissolving of O_(3) into water with strong motivation method.With the strong ionization discharge electric field intensity of 96 kV/cm,the discharge power of 363 W,and the reaction time of ozone reacting with water of 6.2 min,the ozone solution concentration achieved 38.5 mg/L.This will provide a favorable basic conditions for the application of ozone water solution.
作者 袁慧 白敏菂 徐海宁 何叶 崔志琦 YUAN Hui;BAI Min-di;XU Hai-ning;HE Ye;CUI Zhi-qi(Department of Physics,Dalian Maritime University,Dalian116026,China)
出处 《应用化工》 CAS CSCD 北大核心 2019年第S01期17-20,共4页 Applied Chemical Industry
基金 国家自然科学基金(61671100)。
关键词 气体放电 激励溶解 臭氧水溶液 等离子体化学反应 模型 gas discharge excitation dissolving ozone water solution plasma chemical reaction model
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  • 1陈旺生,向晓东,陆继东.电除尘器粉尘层反电晕击穿厚度理论与试验[J].环境科学与技术,2006,29(10):32-33. 被引量:9
  • 2裘亮,孟月东,任兆杏,钟少锋.一种新型微空阴极结构的大气压射频冷等离子体源[J].物理学报,2006,55(11):5872-5877. 被引量:4
  • 3岳敏,徐国胜,何剑.电除尘器气流分布与粉尘沉降规律试验研究[J].环境污染与防治,2007,29(1):30-32. 被引量:7
  • 4白敏菂,依成武,杨波,储金宇,吴春笃,白希尧.电除尘技术研究现状及趋势[J].环境工程学报,2007,1(8):15-19. 被引量:9
  • 5KERN W, PUOTINEN D A. RCA cleaning[J]. RCA Rev, 1970, 31:187.
  • 6HEYNS.M, MERTENS P W, RUZYLLO J, et al.Advanced wet and dry cleaning coming together for next generation[J].Solid State Technol, 1999,42: 37.
  • 7MORITA H, IDA J I. Advanced UCT Cleaning process based on specific gases dissolved ultra-pure water[A].IEEE Int Symp on Semiconductor Manufacturing[C].San Francisco, CA, 1999, 453.
  • 8NELSON S. Using An ozone water last cleaning process to research the effect of process parameters on wafer contamination[A]. Proc of the Semiconductor Pure Water and Chemicals Conf[C]. Santa Clara, CA,1996, 230-242.
  • 9PARK J G,HAN J H. The behavior of ozone in wet cleaning chemical: Cleaning technology in semiconductor device manufacturing[J]. Electrochem.Soc.Proc, 1998, 197(35): 231.
  • 10RENA SONDERMASCHINEN GMBH.Benefits of HF/O3 application in wafer cleaning and drying[Z].

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