基于薄膜工艺的1030GHz混频器和750~1100GHz倍频器研制

Design of a 1030GHz mixer and a 750~1100GHz tripler based on thin-film technology

基于南京电子器件研究所砷化镓工艺线,自主完成了750~1100 GHz全频带三倍频器以及中心频率为1030 GHz的低损耗二次谐波混频器的研制。为了提升模块的性能,将传统的场路结合的设计方法进行了扩展,引入器件的参数优化,并建立起两者互为反馈的关系,从而达到整个设计过程的闭环。研制出的单片电路厚度为3μm,并通过梁氏引线支撑悬置于腔体结构中。测试结果表明宽带倍频器在790~1100 GHz频率范围内输出功率为-23~-11 dBm。以上述倍频源作为射频信号对二次谐波混频器进行测试,在1020~1044 GHz频率范围内变频损耗优于17.5 dB,在1030 GHz处测得的最小变频损耗为14.5 dB。

Based on the GaAs process of Nanjing electronic devices institute,a 750~1100 GHz tripler and a low loss 1030 GHz sub-harmonic mixer have been completed.To improve the performance of the module,the parameter optimi-zation of the device is introduced in the traditional design method of field circuit combination,and the mutual feedback relationship is established.Therefore,the whole design process establishes the closed-loop.The 3μm thick monolithic circuit is supported in the cavity structure by using beam lead.The measured result shows that the output power of the broadband frequency multiplier is-23~-11 dBm in the frequency range of 790~1100 GHz.Using the above-mentioned frequency multiplier source as the RF signal to test the sub-harmonic mixer,the conversion loss is better than 17.5 dB in the frequency range of 1020~1044 GHz,and the minimum conversion loss is 14.5 dB at 1030 GHz.