期刊文献+

The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition

下载PDF
导出
摘要 Nitrogen-doped diamond-like carbon(N-DLC)films were synthesized by helicon wave plasma chemical vapor deposition(HWP-CVD).The mechanism of the plasma influence on the N-DLC structure and properties was revealed by the diagnosis of plasma.The effects of nitrogen doping on the mechanical and hydrophobicity properties of DLC films were studied.The change in the ratio of precursor gas flow reduces the concentration of film-forming groups,resulting in a decrease of growth rate with increasing nitrogen flow rate.The morphology and structure of N-DLC films were characterized by scanning probe microscopy,Raman spectroscopy,and X-ray photoemission spectroscopy.The mechanical properties and wettability of N-DLC were analyzed by an ultra-micro hardness tester and JC2000DM system.The results show that the content ratio of N^(+)and N_(2)^(+)is positively correlated with the mechanical properties and wettability of N-DLC films.The enhancement hardness and elastic modulus of N-DLC are attributed to the increase in sp3 carbon–nitrogen bond content in the film,reaching 26.5 GPa and 160 GPa respectively.Water contact measurement shows that the increase in the nitrogen-bond structure in N-DLC gives the film excellent hydrophobic properties,and the optimal water contact angle reaches 111.2°.It is shown that HWP technology has unique advantages in the modulation of functional nanomaterials.
作者 Yan YANG Tianyuan HUANG Maoyang LI Yaowei YU Jianjun HUANG Bin YU Xuemei WU Peiyu JI 杨燕;黄天源;李茂洋;余耀伟;黄建军;于斌;吴雪梅;季佩宇(College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Advanced Energy Research Center,Shenzhen University,Shenzhen 518060,People's Republic of China;School of Physical Science and Technology,Soochow University,Suzhou 215123,People's Republic of China;Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,People's Republic of China6 School of Optoelectr;onic Science and Engineering,Soochow University,Suzhou 215123,People's Republic of China)
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2022年第10期98-104,共7页 等离子体科学和技术(英文版)
基金 supported by National Natural Science Foundation of China (Nos. 11975163, 12175160) Shenzhen Clean Energy Research Institute
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部