碳化硅与氮化硼协同增强PVDF电介质材料的设计与性能研究

Design and Properties of Silicon Carbide and Boron Nitride Synergistically Reinforced PVDF Dielectrics

分别将碳化硅(SiC)和氮化硼(BN)与聚偏氟乙烯(PVDF)配制成两种高分子溶液,然后交替涂膜制备具有三明治结构的复合电介质薄膜。利用XRD和FESEM表征了复合电介质薄膜的结构及微观形貌,重点研究了复合材料的介电和储能特性。研究表明,在100 Hz下,复合材料(S_(4)B_(1)S_(4))的介电常数提高至16.4,介电损耗仅为0.05,同时击穿强度高达114.3 kV/mm。相比于纯的PVDF(介电常数9.9,损耗0.04,击穿强度93 kV/mm),储能密度提高了250%。

In this study,two kinds of polyvinylidene fluoride(PVDF)solutions with different amount of silicon carbide(SiC)and boron nitride(BN)were dissolved in DMF solvent.The composite dielectric films with sandwich structure were then prepared by alternately coating the above two solutions.The structure and microscopic morphology of the composites were characterized by XRD and FESEM.The dielectric and energy storage properties of the composites were mainly studied.The study showed that the dielectric constant of the composite material(S_(4)B_(1)S_(4))was increased to 16.4 at 100 Hz,the dielectric loss was only 0.05,and the breakdown strength was up to 114.3 kV/mm.Compared with that of the pure PVDF(dielectric constant of 9.9,dielectric loss of 0.04 and breakdown strength of 93.0 kV/mm),the energy storage density was increased by 250%.