低温低压氧化工艺对PERC单晶硅太阳电池性能影响的研究

STUDY ON EFFECT OF LOW TEMPERATURE AND LOW PRESSURE OXIDATION PROCESS ON THE PERFORMANCE OF PERC MONO-Si SOLAR CELLS

以采用低温低压氧化工艺的PERC单晶硅太阳电池为研究对象,将在(600~700℃低温段、200mbar低压条件下制备的二氧化硅层作为PERC单晶硅太阳电池发射极表面的钝化层,并对该种太阳电池与未采用氧化工艺的PERC单晶硅太阳电池的性能进行测试及对比。测试结果显示:采用低温低压氧化工艺的PERC单晶硅太阳电池与未采用氧化工艺的PERC单晶硅太阳电池相比,光电转换效率可提高0.64%,方块电阻可增加8.3Ω/□,少子寿命可提高59.76μs,开路电压和短路电流可分别提高0.01080 V和0.13 A。由此可知,低温低压氧化工艺是提高PERC单晶硅太阳电池光电转换效率的有效途径。以期可为更高效PERC单晶硅太阳电池的制备提供参考。

In this paper,the PERC mono-Si solar cells using low temperature and low pressure oxidation process are used as the research object,and the silicon dioxide layer prepared at 600~700 ℃ low temperature and 200 mbar low pressure is used as the passivation layer on the emitter surface of PERC monoSi solar cells. The performance of this kind of solar cells are tested and compared with that of the PERC mono-Si solar cells without oxidation process. The test results show that the photoelectric conversion efficiency of PERC mono-Si solar cells with low temperature and low pressure oxidation process can be increased by 0.64% and the sheet resistance can be increased by 8.3 Ω/□,the minority carrier lifetime can be increased by 59.76 μs,and the open-circuit voltage and short-circuit current can be increased by 0.0108 V and 0.13 A,respectively. It can be seen that the low temperature and low pressure oxidation process is an effective way to improve the photoelectric conversion efficiency of PERC mono-Si solar cells. It is expected to improve the reference for the preparation of more efficient PERC mono-Si solar cells.