摘要
提出了抑制CMOS输出端口反向漏电的结构,当电源端接地或者悬空,CMOS输出端口接高电平时,通过优化控制逻辑,由输出端口为电路提供电源电压,从而抑制了输出端口对电源端口的漏电。以华润微电子0.25μm 5 V工艺实现电路版图并流片,典型漏电为0.01μA。
A structure to suppress the reverse leakage of CMOS output port is proposed.When the power terminal is grounded or suspended,and the CMOS output port is connected to a high level,the output port provides the power voltage for the circuit by optimizing the control logic,so as to suppress the leakage of output port to power port.Based on China Resources Microelectronics 0.25μm 5 V process,parallel flow of circuit layout is realized,and the typical leakage is 0.01μA.
作者
叶宗祥
史良俊
YE Zongxiang;SHI Liangjun(China Electronics Technology Corporation No.55 Research Institute,Nanjing 210096,China;Wuxi Etek Micro-Electronic Co.,Ltd.,Wuxi 214028,China)
出处
《电子与封装》
2022年第10期36-41,共6页
Electronics & Packaging