基于双极工艺的高速MOSFET栅驱动电路

High Speed MOSFET Gate Drive Circuit with Bipolar Process

基于2μm双极工艺设计了全新的高速功率栅驱动电路,并内置了死区时间控制电路,该电路可以防止驱动器内部电源接地形成短路而烧毁器件。工作电压范围为5~35 V,传输上升延迟时间不大于25 ns,下降延迟时间不大于32 ns,上升、下降建立时间不超过12 ns,工作电流不超过45 mA。

A new power gate drive circuit is designed by 2μm bipolar process,and a dead-time control circuit is built-in,which is to preventing the driver burnout by internal power supply shorted to ground.The working voltage of the circuit is 5-35 V,the transmission rise delay time is not more than 25 ns,the drop delay time is not more than 32 ns,the rise and fall establishment time is not more than 12 ns,and the working current is not more than 45 mA.