钛镓掺杂氧化锌透明半导体薄膜的光电性能研究

Optical and electrical performance of titanium-gallium-zinc oxide transparent semiconductor thin films

以玻璃作为衬底,采用射频磁控溅射技术,制备了钛镓掺杂氧化锌(TiGaZnO)透明半导体薄膜,通过紫外-可见分光光度计和霍耳效应测试系统表征,研究了沉积气压对样品光学和电学性能的影响。结果表明:所有薄膜样品在可见光波段都具有良好的透光性,其可见光平均透射率均高于81.0%。同时沉积气压对薄膜光学和电学性能也具有明显的影响,当沉积气压为0.4 Pa时,TiGaZnO薄膜具有相对高的品质因数(4.034×10^(3)Ω^(-1)·cm^(-1))和低的电阻率(1.685×10^(-3)Ω·cm),其光电综合性能较好。

The transparent semiconductor thin films of titanium-gallium-zinc oxide(TiGaZnO)were prepared on glass substrates by magnetron sputtering.The effects of deposition pressure on optical and electrical characteristics were studied by UV-Vis spectrophotometer and Hall-effect measurement system.The results demonstrate that all the prepared samples possess high transparency in the visible light region.The average transmittance in the visible range exceeds 81.0% for all the prepared samples regardless of the deposition pressure.The deposition pressure has a significant impact on the optical and electrical characteristics of the prepared samples.The thin film fabricated at deposition pressure of 0.4 Pa has relatively better optoelectronic performance,with a high figure of merit of 4.034×10^(3)Ω^(-1)∙cm^(-1) and low resistivity of 1.685×10^(-3)Ω∙cm.