Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures

High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scanning electron microscope(SEM)and Hall and transmittance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear programming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85%in the visible range and a low resistivity of 2.4×10^(−3)Ω·cm and can thus be used as a transparent electrode.