利用双阶梯波导层对深紫外激光二极管的性能优化

Performance optimization of deep UV laser diode using a double stepped waveguide layer

在深紫外激光二极管中,波导层的作用是用来传输并限制光束.传统的深紫外激光二极管存在很强的极化感应电场,这种电场能够降低深紫外激光二极管的光电性能.本文提出了一种新型双阶梯型上波导层(UWG)和下波导层(LWG),可以提高半导体激光器的性能.通过使用Crosslight软件将矩形、单阶梯型和双阶梯型波导层三种不同的结构进行仿真研究,比较三种结构器件的能带图、电子空穴浓度、辐射复合率、P-I以及V-I特性等.结果表明,新型双阶梯波导层结构的应用增加了电子有效势垒的高度,缓解了电子阻挡层的能带弯曲,减小了极化电场的影响,从而提升了该器件的光学和电学性能.

In deep UV laser diodes,the waveguide layer is used to transmit and restrict light.In this paper,a new two step upper waveguide layer(UWG)and lower waveguide layer(LWG)are proposed to improve the performance of the semi-conductor laser.By using Crosslight software,three different structures of rectangular,single-stepped and double-stepped waveguides are simulated,and the energy band diagrams,electron-hole concentrations,radiation recombination rates,P-I and V-I characteristics of the three structures are compared,it is concluded that the application of the new double-step waveguide structure increases the height of the electron effective barrier,eases the energy band bending of the electron barrier,reduces the influence of the polarization electric field,and has better optical and electrical properties.