摘要
平面纳米真空三极管只需要平面工艺,与现有的微电子工艺兼容,与基于经典Spindt阴极的真空微电子三极管相比,具有工艺相对简单等特点,同样具备纳米真空电子器件抗辐射、温度稳定性好等优点。本文采用粒子模拟方法对平面型纳米真空三极管的场发射特性进行了计算机模拟研究,模拟中考虑了空间电荷的影响。典型器件的模拟结果表明,平面型纳米真空三极管具有信号响应速度快,工作电压较低等优点。研究了该三极管结构中的尖端曲率半径、尖端相对高度、栅极电压和阳极电压对场发射特性的影响,有助于设计和优化该类器件结构。这种平面型纳米真空三极管可望成为真空集成电路的基础器件,并在卫星等航空航天领域等需要抗辐射领域获得应用。
The planar nano-vacuum triode only requires planar process,which is compatible with the existing microelectronic process.Compared with the vacuum microelectronic triodes based on classic Spindt cathodes,it has relatively simple process but still has the advantages of nano-vacuum electronic devices such as radiation resistance and good temperature stability.The field emission characteristics of a planar nano-vacuum triode are studied by using particle simulation method,and the influence of space charge is considered in the simulation.The simulation result of typical device shows that the planar nano-vacuum triode has the advantages of fast signal response and low operating voltage.The effects of tip curvature radius,tip relative height,gate voltage and anode voltage on the field emission characteristics of the triode are studied,which is helpful to design and optimize this type of device structure.The planar nano-vacuum triode is expected to become the basic device of vacuum integrated circuit and be applied in the fields requiring radiation resistance such as satellite and other aerospace fields.
作者
何建澄
柳建龙
曾葆青
HE Jian-cheng;LIU Jian-long;ZENG Bao-qing(School of Electronic Science and Engineering(National Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《真空电子技术》
2022年第5期63-66,76,共5页
Vacuum Electronics
基金
国家自然科学基金项目(6191002)。
