锗化学机械抛光工艺中绿色环保氧化剂的研究

Study on Green Oxidant in Germanium Chemical Mechanical Polishing Process

研究了锗晶片化学机械抛光液中绿色环保氧化剂H_(2)O_(2)和KHSO_(5)的浓度变化和抛光液的pH值对锗晶片去除速率和锗晶片表面质量的影响。结果表明:KHSO_(5)作为一种新型的绿色环保氧化剂,当抛光液pH为11,氧化剂质量分数为2%时,在特定抛光工艺参数下,抛光片能够得到良好的抛光表面。

In this paper,the effects of the concentration of green oxidants H_(2)O_(2) and KHSO_(5) and the pH value of the polishing solution on the removal rate and surface quality of germanium wafers were studied.The results show that:as a new green oxidant,Oxone can obtain a good polished surface under specific polishing process parameters when the pH of polishing solution is 11 and the concentration of Oxone is 2%.