GaSe纳米带的可控生长及其光电探测器的光电特性

Controllable Growth of GaSe Nanobelts and Photoelectric Characteristics of Photodetector Based on GaSe Nanobelt

二维层状半导体材料GaSe由于具有良好的光电特性,在光电子器件领域备受关注。以GaSe/Ga_(2)Se_(3)高纯粉末混合物为前驱体,通过化学气相沉积(CVD)法实现了结晶良好的六方晶系GaSe纳米带的均匀、可控生长。分析表明,反应温度和反应时间对纯相GaSe纳米带的生长起着重要作用。900℃下反应20 min获得了大量、均匀的纯相GaSe纳米带,宽度为20~40μm,长度达数百微米。产物GaSe纳米带在可见光区域具有良好的光学吸收,光学带隙约2.12 eV。并且,基于单根GaSe纳米带制备了光电探测器,GaSe纳米带光电探测器在可见光照射下具有良好的光电响应,在光照强度为7.32μW·cm^(-2)的530 nm波长光照下,其响应度和增益分别高达835.2 A·W^(-1)和1954,有望应用于高性能光电探测领域。

Two-dimensional layered semiconductor material GaSe has attracted much attention in the field of photoelectronic devices owing to its good photoelectric characteristics.The uniform and controllable growth of hexagonal GaSe nanobelts with good crystallization was realized by using GaSe/Ga_(2)Se_(3) high-purity powder mixture as precursor through chemical vapor deposition(CVD)method.The analysis shows that the reaction temperature and reaction time play an important role in the growth of pure phase GaSe nanobelts.A large number of uniform pure phase GaSe nanobelts with a width of 20-40μm and a length of up to hundreds of microns were obtained after reacting at 900℃for 20 min.As-obtained GaSe nanobelts have good optical absorption in the visible region,and the optical bandgap is about 2.12 eV.Moreover,a photodetector based on a single GaSe nanobelt was prepared.The GaSe nanobelt-based photodetector has good photoelectric response under visible light irradiation.Under the light of 530 nm wavelength with a light intensity of 7.32μW·cm^(-2),the responsivity and gain of the photodetector reach 835.2 A·W^(-1)and 1954,respectively.The photodetector is expected to be used in the field of high-performance photoelectric detection.