1064nm连续激光辐照硅基PIN探测器输出电流恢复时间的实验研究

Experimental Study on Output Current Recovery Time of Silicon based PIN Detector Irradiated by 1064nm Continuous Laser

光电探测器是激光及其应用系统中非常重要的一部分,当硅基PIN光电探测器受到激光辐照时,光电探测器的光电性能下降,其造成的损伤效果可以采用光电探测器的电学性能表征。对此,开展1064 nm连续激光辐照硅基PIN探测器输出电流恢复时间的实验研究,搭建相应的实验系统,选择合适的激光参数辐照硅基PIN光电探测器,监测其输出电流恢复时间的变化规律,得出输出电流恢复时间的影响机理。结果表明:随着激光功率密度的增加,硅基PIN光电探测器输出电流的恢复时间也随之增加。外置偏压对输出电流的恢复时间没有影响。

Photodetector is a very important part of laser and its application system.When the silicon-based PIN photode-tector is irradiated by laser,the photoelectric performance of the detector decreases,and the damage effect caused by the photodetector can be characterized by its electrical performance.To solve this problem,an experimental study was carried out on the output current recovery time of silicon-based PIN photodetector irradiated by 1064nm continuous laser.The cor-responding experimental system was built.The change rule of output current recovery time was monitored by irradiated sili-con-based PIN photodetector with appropriate laser parameters;and the influence mechanism of output current recovery time was obtained.The results show that the recovery time of output current of silicon-based PIN photodetector increases with the increase of laser power density.External bias has no effect on the recovery time of output current.