摘要
The aim of this study is to optimize the conditions for producing thin VO_(2)films for their use in SAW devices.We used the pulsed laser deposition(PLD)method to produce VO_(2)films.We used a metallic vanadium target.The dependence of the oxygen pressure during PLD on the resistive metal-insulator transition(MIT)on substrates of c-sapphire and LiNbO_(3)YX/128°was studied.The resulting films had sharp metal-insulator temperature transitions on c-Al_(2)O_(3).The most high-quality films showed resistance change by four orders of magnitude.At the lower point of the hysteresis,the resistance of these samples was in the range of 50-100Ω.The synthesized VO_(2)films had a sharp temperature transition and a relatively small width of thermal hysteresis.The SAW damping during its passage through a VO_(2)/ZnO/LiNbO_(3)YX/128°film at the metal-insulator phase transition temperature was studied.Attenuation SAW decreases with increasing temperature from 52 dB/cm to 0 dB/cm.
基金
This research work is supported by Southern Federal University,project No.07/2020-06-MM.