10.6μm红外膜系制备工艺研究

A Study on the Preparing Technique of the 10.6 μm Infrared Coating

采用真空镀膜法,在半导体晶片GaAs衬底上制备红外增透和增反光学薄膜,研究了Si滤光片对镀膜工艺的影响以及10.6μm增透膜系和10.6μm增反膜系的透射特性.结果表明,Si滤光片可以有效地消除单色仪二级以上光谱对镀膜工艺的影响,是一种理想的红外监控光的滤光片.监控光波长的修正值△λ约为原波长的2.5%～3%时,是制备该红外光学薄膜的较佳的条件.

The antireflection infrared coating and the reflection enhancing infrared coating are prepared on GaAs semiconductor wafer by vacuum evaporation.The effect of Si optical filter on the film coating technique is studied,the transmission characteristic of 10.6 μm antireflection infrared coating and the 10.6μm reflection enhancing infrared coating are also studied .The experimental results show that the influence of spectrum above second order of monochromator on film coating technique has been erased by using Si optical filter.The Si optical filter is excellent for monitor light of infrared.The correction △λ of monitor light wavelength is about 2.5%~3% λ by using Si optical filter.The better technique of preparing infrared coating has been obtained.