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Improving reverse intersystem crossing of MR-TADF emitters for OLEDs 被引量:1

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摘要 Thermally activated delayed fluorescence(TADF)emitter is a promising organic light-emitting diode(OLED)material due to low cost,wide luminous color gamut and 100%exciton utilization efficiency[1].To achieve high TADF performance,a feasible strategy is to construct a twisted donor–acceptor(D–A)unit,decreasing the overlap between the highest occupied molecular orbital(HOMO)and the lowest unoccupied molecular orbital(LUMO),and minimizing the energy gap(∆E_(ST))between the lowest singlet(S_(1))and triplet(T_(1))states[2,3].However,this long-range charge transfer feature is often disadvantageous for achieving high oscillator strengths(f)and radiative transition rates(k_(r))[4](Fig.1(a)).
出处 《Journal of Semiconductors》 EI CAS CSCD 2022年第11期5-8,共4页 半导体学报(英文版)
基金 This work was supported by the National Natural Science Foundation of China(21975119) L.Ding thanks the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02) the National Natural Science Foundation of China(51922032 and 21961160720).
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