摘要
In this work,we have successfully grown high quality epitaxialβ-Ga_(2)O_(3)thin films onβ-Ga_(2)O_(3)(100)and Al_(2)O_(3)(0001)substrates using pulsed laser deposition(PLD).By optimizing temperature and oxygen pressure,the best conditions were found to be 650-700℃and 0.5 Pa.To further improve the quality of hetero-epitaxialβ-Ga_(2)O_(3),the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing.From the optical transmittance measurements,the films grown at 600-750℃exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm wavelength.High resolution transmission electron microscope(HRTEM)images and X-ray diffraction(XRD)patterns demonstrate thatβ-Ga_(2)O_(3)(-201)//Al_(2)O_(3)(0001)epitaxial texture dominated the epitaxial oxide films on sapphire substrate,which opens up the possibilities of high power electric devices.
基金
the National Natural Science Foundation of China(61674165,61604167,61574160,61704183,61404159,11604366)
the Natural Science Foundation of Jiangsu Province(BK20170432,BK20160397,BK20140394)
the National Key R&D Program of China(2016YFB0401803)
the Strategic Priority Research Program of the Chinese Academy of Science(XDA09020401)
XRD,AFM and TEM experiments were performed at the Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences.
