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Modification of structural and dielectric properties of polycrystalline Gd-doped BFO–PZO

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摘要 (1-y)(BiFe_(1-x)GdxO_(3))–y(PbZrO3)composites(y=0:5),having four different Gd concentrations(x=0:05,0.1,0.15,and 0.2),were synthesized and their structural,dielectric,and ferroelectric properties have been studied using different characterization techniques.In addition,to investigate the effect of ion implantation on the microstructure and dielectric properties,these composites were exposed to 2 MeV He+-ions.Modifications of the structure,surface morphology and electrical properties of the samples before and after ion exposure were demonstrated using powder X-ray diffraction(XRD),scanning electron microscopy(SEM)technique,and LCR meter.The compositional analysis was carried out using energy dispersive X-ray spectrometry(EDS).XRD results demonstrated a decrease in the intensity profile of the dominant peak by a factor of 6 showing a degradation of the crystallinity.Willliamson–Hall(WH)plots reveal reduction in the grain size after irradiation along with an increase in strain and dislocation density.A decrease in the dielectric constant and loss has been recorded after ion beam exposure with reduction in ac conductivity value.The contribution of grain and grain boundary effect in conduction mechanism has been addressed using Nyquist plots.All the samples demonstrate a lossy ferroelectric loop which shows a clear modification upon irradiation.The role of structural defects modifying the physical properties of the composite materials is discussed in this work.
出处 《Journal of Advanced Dielectrics》 CAS 2018年第5期1-21,共21页 先进电介质学报(英文)
基金 Thomas Osipowicz,National University of Singapore for extending access to the accelerator facility.The author,P.Nayak,acknowledges CSIR for sanction of the Emeritus Scientist scheme(Project No.21(0944)/12/EMR-II) One of the authors,B.Behera,acknowledges the SERB under the DST Fast Track Scheme for Young Scientists(Project No.SR/FTP/PS-036/2011)New Delhi,India.
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