GeSe纳米电子器件整流特性的掺杂调控

Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

运用密度泛函理论和非平衡格林函数相结合的方法,研究了第Ⅴ主族原子(P,As,Sb)替位掺杂条件下不同中心半导体沟道长度的GeSe纳米电子器件的整流特性.结果表明,第Ⅴ族原子局部替位掺杂的扶手椅型GeSe纳米带在中心半导体沟道5.1 nm长度范围内,在正偏压下不同中心半导体沟道长度的扶手椅型GeSe纳米带电流随着电压的增大而增大;在负偏压下当中心半导体沟道长度从1.7 nm增加至3.4 nm时,电流不随电压的变化而变化,继续增大中心半导体沟道长度,电流大小接近于0,器件呈现显著的整流特性.

The rectification characteristics of GeSe nanoelectronic devices with different channel length of the central semiconductor doped with group V atomic substitution is investigated by using a combination of density general function theory and nonequilibrium Green’s function.Results that: under positive bias, the current of armchair germanium selenide nanoribbons with 5.1 nm central semiconductor channel lengths increases with increasing voltage;while under negative bias, the current does not vary with voltage as the central semiconductor channel length increases from 1.7 nm to 3.4 nm;the magnitude is close to zero when the channel length of the central semiconductor continues to increase, and the devices exhibit significant rectification characteristics.