MMIC多功能芯片源漏金属异常的分析

Failure Analysis of Source-drain Metal on Multifunctional Chip of MMIC

采用超薄TEM分析技术,解决了15 nm以下厚度的MMIC多功能芯片金属薄膜的分析瓶颈问题。首先,对一款多功能芯片源漏制作工艺中源漏金属薄膜的凸起部分进行了纳米维度的能谱分析,准确地定位了故障点的存在位置;然后,分析并阐述了该异常造成源漏金属薄膜失效的过程和机理;最后,提出了相应的解决方案,为提高产品成品率提供了一定的指导。

Using the ultrathin TEM analysis technology,the analysis bottleneck of MMIC multi-functional chip metal film with a thickness less than 15 nm is solved.Firstly,a nanodimensional energy spectrum analysis is performed on the raised part of the source-drain metal film in the source-drain fabrication process of a multi-functional chip,and the location of the fault point is accurately located.Then,the process and mechanism of the source-drain metal film failure caused by the anomaly are analyzed and explained.Finally,the corresponding solution is proposed,which provides certain guidance for improving the product yield.