摘要
本文提出了一种带有动态缓冲器的宽电源范围低压差线性稳压器(LDO)。该LDO使用0.18μm BCD工艺成功流片并测试,总面积为850μm×1090μm。耐高压的LDMOS用于承受每条路径上的大部分电压,以满足宽电源范围的要求。缓冲器中使用动态电流偏置来降低其输出电阻,从而将传输器件栅极处的极点推至高频,并且不会耗散大的静态电流。本文的LDO在空载情况下消耗16μA静态电流,能在5.5V-40V的宽电源范围内正常工作,典型输出电压为5V,并且在5.5V供电,低压差的情况下能提供70mA负载电流。
A wide power supply range low-dropout regulator(LDO)with dynamic buffer is proposed in this paper.And the LDO has been successfully implemented in a 0.18μm BCD process with a total silicon area of 850μm×1090μm.High voltage-tolerance LDMOS is used to withstand most of the voltage on each path for meeting the requirements of a wide power supply range.Dynamic current bias is used in the buffer to lower its output resistance such that the pole at the gate of the pass device is pushed to high frequencies without dissipating large quiescent cur-rent.The proposed LDO dissipates 16μA quiescent current at no-load condition.The LDO is able to deliver up to 70mA load current under 5.5 to 40 V power supply.The typical output voltage of the LDO is 5V,and it can provide 70mA load current under the condition of 5.5V power supply and low dropout voltage.
作者
文成
汪洋
WEN Cheng;WANG Yang(School of Physics and Optoelectronics,Xiangtan University;Microelectronics and System Integration Hunan Engineering Laboratory)
出处
《中国集成电路》
2022年第11期21-25,62,共6页
China lntegrated Circuit
基金
国自科基金项目(No.61774129,61827812)
湖南省教育厅优秀青年项目(No.19B557)
湖南省学位与研究生教育改革研究项目资助(No.QL20210141)。
